Thin‐film metal‐insulator‐semiconductor structures have been prepared by deposition ofn‐type indium telluride films on partially oxidized aluminum layers. An analysis of the current‐voltage characteristics indicates the current transfer mechanism in these structures to be of the Schottky thermionic emission type in low field and space‐charge limited at high fields. The barrier height presented to the conduction electrons in such structures has also been calculated from the temperature dependence of theI‐Vcharacteristics.