Electrical properties of Si1−xCxalloys and modulation doped Si/Si1−xCx/Si structures
作者:
W. Faschinger,
S. Zerlauth,
G. Bauer,
L. Palmetshofer,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 26
页码: 3933-3935
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114409
出版商: AIP
数据来源: AIP
摘要:
We report electrical properties of undoped and Sb‐doped Si1−xCxalloys grown by molecular beam epitaxy. Nominally undoped alloy layers exhibit electron background levels of 4×1016cm−3with a mobility above 30 000 cm2/V s at low temperatures. The layers can be doped with Sb at low growth temperatures, and the carrier concentrations and mobilities obtained are comparable to similarly doped Si layers. Modulation‐doped Si/Si1−xCx/Si structures with the modulation doping in the Si layer close to the surface exhibit enhanced electron mobilities with peak values of about 10 000 cm2/V s, indicating that Si1−xCxstrained on a silicon substrate forms an electron channel. From the saturation carrier concentration at low temperatures, the electron barrier between Si and Si0.98C0.02is estimated to be about 150 meV. In lightly doped channel structures carrier freeze‐out at low temperatures is observed, indicating a relatively high defect density in the channel. ©1995 American Institute of Physics.
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