A planar GaAs/GaAlAs double heterostructure stripe geometry laser with laterally effective step change of the refraction index is described. The planar structure is achieved by regrowing an embedded stripe selectively on a Be‐implanted stripe, using metalorganic chemical vapor deposition. The near‐field and the far‐field patterns confirm the index guiding mechanism of the light. The threshold current is comparable to those of similar lasers grown by uninterrupted growth process either by liquid phase epitaxy or by metalorganic chemical vapor deposition.