&bgr;‐SiC (3C–SiC) films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition from SiH4/CH4/H2mixtures at 500 °C. The crystalline structure and chemical composition of the deposited film were found to depend on the SiH4/CH4flow ratio. With a sufficient energy supply from microwave power and a SiH4/CH4flow ratio of 0.5 and lower, stoichiometric SiC could be deposited on Si substrates. Microcrystalline &bgr;‐SiC was grown at a SiH4/CH4flow ratio of 0.5, whereas amorphous SiC was obtained at the SiH4/CH4flow ratios lower than 0.5. When the SiH4/CH4flow ratio was above 0.5, only polycrystalline Si could be deposited. ©1995 American Institute of Physics.