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The behaviour of mosaic blocks and electrical properties of polysilicon under ion implantation

 

作者: A.P. Pavlov,   P.V. Pavlov,   D.I. Tetelbaum,   V.G. Shengurov,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1993）
卷期: Volume 125, issue 1-3  

页码: 181-184

 

ISSN:1042-0150

 

年代: 1993

 

DOI:10.1080/10420159308225500

 

出版商: Taylor & Francis Group

 

关键词: ion implantation;polysilicon;mosaic blocks;activation energy of conductivity;dangling bonds

 

数据来源: Taylor

 

摘要:

The change in microstrains ϵ, block sizesLand in the temperature dependences of conductivity of polysilicon with the grain size 30-40nm at N+, Ne+, P+ion irradiation has been studied. It is shown that ϵ increases whileLpractically is not changing up to amorphization. The change in conductivity is governed by an increase in the density of states near the Fermi level and depends both on the damage rate for the given ions and their chemical activity.

 

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