Resonant tunneling through ErAs semimetal quantum wells
作者:
D. E. Brehmer,
Kai Zhang,
Ch. J. Schwarz,
S.‐P. Chau,
S. J. Allen,
J. P. Ibbetson,
J. P. Zhang,
C. J. Palmstro&slash;m,
B. Wilkens,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 9
页码: 1268-1270
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114393
出版商: AIP
数据来源: AIP
摘要:
Resonant tunneling is observed in double barrier resonant tunneling diodes with semimetallic ErAs quantum wells. Magnetic field dependence distinguishes two different resonant channels while the thickness dependence of the voltage for resonant tunneling strongly suggests that the electrons tunnel through hole states in the semimetal quantum well. ©1995 American Institute of Physics.
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