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Resonant tunneling through ErAs semimetal quantum wells

 

作者: D. E. Brehmer,   Kai Zhang,   Ch. J. Schwarz,   S.‐P. Chau,   S. J. Allen,   J. P. Ibbetson,   J. P. Zhang,   C. J. Palmstro&slash;m,   B. Wilkens,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 67, issue 9  

页码: 1268-1270

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114393

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Resonant tunneling is observed in double barrier resonant tunneling diodes with semimetallic ErAs quantum wells. Magnetic field dependence distinguishes two different resonant channels while the thickness dependence of the voltage for resonant tunneling strongly suggests that the electrons tunnel through hole states in the semimetal quantum well. ©1995 American Institute of Physics.

 

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