Zn gettering in InGaAs/InP interfaces
作者:
M. Geva,
T. E. Seidel,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 59,
issue 7
页码: 2408-2415
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.336342
出版商: AIP
数据来源: AIP
摘要:
Zn accumulation (gettering) in InGaAs/InP interfaces was studied experimentally using secondary ion mass spectrometry (SIMS). The Zn was introduced by diffusion from solid and gaseous sources and was found to often getter in a thin region at the interface when diffused across it. Its peak concentration there increased with diffusion time and temperature and in some cases exceeded the solid solubility value by two orders of magnitude. Possible mechanisms for the Zn gettering are discussed.
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