Electron relaxation and capture in InGaAsP quantum well laser structures
作者:
S. Marcinkevicˇius,
U. Olin,
J. Wallin,
G. Landgren,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 23
页码: 3164-3166
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113710
出版商: AIP
数据来源: AIP
摘要:
Experimental investigations of electron relaxation in the confinement region and capture into the quantum wells are reported for InGaAsP/InP laser structures. The measurements are performed by time‐resolved photoluminescence using upconversion. The value for the electron capture of 1.4 ps is obtained. No dependence on the potential profile of confining layers has been observed. ©1995 American Institute of Physics.
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