Ellipsometric study of tellurium implanted silicon
作者:
A. Kučírková,
期刊:
Radiation Effects
(Taylor Available online 1976)
卷期:
Volume 28,
issue 3-4
页码: 129-131
ISSN:0033-7579
年代: 1976
DOI:10.1080/00337577608237430
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Ellipsometric parameters as a function of the dose (D= 2.1013− 2.1015ions cm−2) and annealing temperature have been measured on the silicon implanted with 30 keV Te ions. Obtained information on lattice disorder are to a great extent comparable with those of other methods, e.g. backscattering technique. Moreover optical constants of a damage surface layer may be estimated.
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