High‐speed integrated heterojunction field‐effect transistor photodetector: A gated photodetector
作者:
G. W. Taylor,
J. G. Simmons,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 24
页码: 1754-1756
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97737
出版商: AIP
数据来源: AIP
摘要:
A new concept for a high‐speed photodetector is described which promises very low noise with avalanche gain. The detector is constructed as an integrated circuit element in the heterojunction field‐effect transistor technology and utilizes a uniquen‐nheterojunction interface formed by either metalorganic chemical vapor deposition or molecular beam epitaxy growth techniques. The degree of avalanching is controlled via an electrical third terminal.
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