A radio frequency measurement technique for measuring the bulk resistivity of II–VI compound semiconductors is described. Wafers ofn‐type CdS are used to demonstrate the technique. An equivalent circuit model is introduced which predicts a frequency dependence for the CdS wafer impedance which agrees well with the experiment. The model assumes a broad distribution of relaxation times associated with the polarization. The radio frequency method gives values for the resistivity within 15% of four point probe measurements for the lower resistivity wafers, and within 5% for the higher resistivity wafers. ©1994 American Institute of Physics.