Minority carrier diffusion length and lifetime in GaN
作者:
Z. Z. Bandic´,
P. M. Bridger,
E. C. Piquette,
T. C. McGill,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 24
页码: 3166-3168
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121581
出版商: AIP
数据来源: AIP
摘要:
Electron beam induced current measurements on planar Schottky diodes on undoped GaN grown by metalorganic chemical vapor deposition are reported. The minority carrier diffusion length of 0.28 &mgr;m has been measured, indicating minority carrier lifetime of 6.5 ns. The tapping mode atomic force microscopy imaging of the surfaces and scanning electron microscopy of the cross sections have been used to characterize the linear dislocations and columnar structure of the GaN. The possible influence of recombination on the extended defects in GaN on the minority carrier diffusion length and lifetime is discussed, and contrasted to other recombination mechanisms. ©1998 American Institute of Physics.
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