首页   按字顺浏览 期刊浏览 卷期浏览 Anomalous temperature dependence of erbium-related electroluminescence in reverse biase...
Anomalous temperature dependence of erbium-related electroluminescence in reverse biased siliconp–njunction

 

作者: A. M. Emel’yanov,   N. A. Sobolev,   A. N. Yakimenko,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 10  

页码: 1223-1225

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121020

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Electroluminescence (EL) and electrophysical characteristics of erbium and oxygen coimplanted and annealedp–njunctions, characterized by higher values of theEr3+-related EL intensity at∼1.54 &mgr;min the breakdown regime at 300 K as compared with that at 85 K, have been studied in the temperature range from 85 to 300 K. Hole traps in the Er–O codopednlayer were found to be responsible for the anomalous EL behavior. Er-related EL was observed in the same samples in avalanche breakdown at high temperatures and in tunnel breakdown at low temperatures. ©1998 American Institute of Physics.

 

点击下载:  PDF (63KB)



返 回