Anomalous temperature dependence of erbium-related electroluminescence in reverse biased siliconp–njunction
作者:
A. M. Emel’yanov,
N. A. Sobolev,
A. N. Yakimenko,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 10
页码: 1223-1225
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121020
出版商: AIP
数据来源: AIP
摘要:
Electroluminescence (EL) and electrophysical characteristics of erbium and oxygen coimplanted and annealedp–njunctions, characterized by higher values of theEr3+-related EL intensity at∼1.54 &mgr;min the breakdown regime at 300 K as compared with that at 85 K, have been studied in the temperature range from 85 to 300 K. Hole traps in the Er–O codopednlayer were found to be responsible for the anomalous EL behavior. Er-related EL was observed in the same samples in avalanche breakdown at high temperatures and in tunnel breakdown at low temperatures. ©1998 American Institute of Physics.
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