Molecular beam homoepitaxy of InSb on the nonpolar (110) face is reported for the first time. Growth conditions and substrate preparation techniques are discussed. With an In beam flux of 3×1014at./cm2 s a growth rate of 0.72 &mgr;m/h is obtained, hence the sticking coefficient of In on InSb (110) is one. Layers of good crystalline quality and of stoichiometric composition were grown at a substrate temperature of 380 °C and a flux ratio &Fgr;Sb/&Fgr;In=3. The &Fgr;Sb/&Fgr;InvsTsdiagram is given. Two surface reconstructions are reported: the well‐known (1×1) at highTsand a new reconstruction with (1×4) symmetry at lowerTs. The latter may be connected with InSb bond breaking or an In overlayer. The epilayers with thicknesses from 1 to 7.7 &mgr;m all shown‐type conductance with mobilities from 1.2 to 7.5 m2/V s at 77 K. By optimizing the growth conditions with respect to the electrical transport properties much higher values should be attainable.