Oxygen contamination in sputter‐deposited Nb films was measured as a function of background pressure and other sputtering variables using Auger electron spectroscopy. Significant variables affecting purity were the degassing rate and the ultimate background pressure prior to sputtering. Serious contamination occurred even when the background pressure was in the 10−10‐Torr range. Getter sputtering within a cryogenically cooled container with the appropriate sputtering variables can reduce contamination to a level nearly identical to that of the target material.