Fabrication of 0.25 μm surface acoustic wave devices by ion beam proximity printing
作者:
D. P. Stumbo,
Sudipto Sen,
G. A. Damm,
F‐O. Fong,
D. W. Engler,
K‐F. Fong,
J. C. Wolfe,
Frederick Cho,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 6
页码: 2879-2881
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585617
出版商: American Vacuum Society
关键词: ACOUSTIC SURFACE WAVES;ION BEAMS;MICROELECTRONICS;SAW FILTERS;ELECTRODES;MASKING;IMAGE FORMING;ACOUSTIC TRANSDUCERS;FABRICATION;WAFERS
数据来源: AIP
摘要:
The electrodes of surface acoustic wave (SAW) devices cannot be represented in a stencil mask as cantilevered beams because the high aspect ratio makes them unstable. Therefore a complementary exposure technique has been developed. The mask pattern is formed by segmenting the electrodes into equal length open and closed areas. The wafer is then exposed twice with an offset equal to the segment length, thus forming a continuous electrode image. This approach has two advantages: (1) the high process latitude of ion beam proximity printing (IBPP) is preserved since, in contrast to the grid‐support approach, no areas are doubly exposed; and (2) only precision translation is required to register the exposures, preserving the single level nature of SAW patterns. Linewidth is shown to change by less than ±15% for ±20% changes in exposure at a 0.25 μm nominal linewidth.
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