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Disorder production and amorphisation in ion implanted silicon

 

作者: D.A. Thompson,   A. Golanski,   K.H. Haugen,   D.V. Stevanovic,   G. Carter,   C.E. Christodoulides,  

 

期刊: Radiation Effects  （Taylor Available online 1980）
卷期: Volume 52, issue 1-2  

页码: 69-84

 

ISSN:0033-7579

 

年代: 1980

 

DOI:10.1080/00337578008210018

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Measurements of the depth profiles of disorder and the depth integrated disorder produced in Si at 40 K or 300 K by low energy (15 keV-60 keV) ions of a range of masses from the light (N+and P+), intermediate (Ar+and As+) to heavy (In+, Sb+, As+2, Bi and Sb+2) were made using Rutherford scattering-dechannelling techniques.

 

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