The Hall coefficients of selectedn‐type GaSb‐InSb alloys have been measured in the range 300° to 800°K. The temperature dependence of the Hall coefficient showed the presence of two bands, and data were analyzed using a two‐band model. The energy separation of the two conduction‐band minima was found to increase, with increasing InSb concentration, from 0.034 to 0.52 eV in the composition range investigated. The temperature dependence of this separation was found to be positive for GaSb and negative for the alloys ranging between +1.8 to −2.0×10−4eV/°K.