In this work, a deep level transient spectroscopy (DLTS) study onn‐type epitaxial cubic silicon carbide grown on Si substrates has been performed. The results of this study indicate the presence of at least two majority‐carrier traps. One trap (SCE1) is located 0.34 eV from the conduction‐band edge; the other trap (SCE2) is located 0.68 eV from the conduction‐band edge. These two traps have concentrations of approximately 1×1015cm−3. The DLTS spectrum as a function of the surface treatment of the SiC has been investigated. The results of this investigation indicate that one of the levels (SCE2) appears to be formed as a result of high‐temperature thermal oxidation.