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Segregated AlGaAs(110) grown by molecular beam epitaxy

 

作者: W. I. Wang,   T. S. Kuan,   J. C. Tsang,   L. L. Chang,   L. Esaki,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 2  

页码: 517-518

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583413

 

出版商: American Vacuum Society

 

关键词: HETEROJUNCTIONS;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;SEGREGATION;CHEMICAL COMPOSITION;MOLECULAR BEAM EPITAXY;ELECTRON MOBILITY;HOLE MOBILITY;ELECTRON GAS;RHEED;TRANSMISSION ELECTRON MICROSCOPY;PHOTOLUMINESCENCE;RAMAN SPECTRA;HALL EFFECT;(Al,Ga)As;GaAs

 

数据来源: AIP

 

摘要:

We have found that AlGaAs films grown by molecular beam epitaxy on (110) orientation tend to segregate to their constituent binaries on an extremely fine scale. However, the microscopic segregation in AlGaAs does not impede its capability of providing suitable, macroscopic barriers in the formation of heterostructures. High mobility two‐dimensional electrons and holes in modulation‐doped AlGaAs/GaAs(110) heterojunctions are demonstrated for the first time, with obvious implications for the combined growth of IV and III–V materials.

 

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