Some Analyses of Radiation Effects on PNP Silicon Devices
作者:
F. A. S. Soliman,
期刊:
Isotopenpraxis Isotopes in Environmental and Health Studies
(Taylor Available online 1990)
卷期:
Volume 26,
issue 5
页码: 225-229
ISSN:0021-1915
年代: 1990
DOI:10.1080/10256019008624283
出版商: Taylor & Francis Group
关键词: breakdown;electrical properties;gain;junction transistors;leakage current;neutron fluence;physical radiation effects;radiation effects
数据来源: Taylor
摘要:
Nuclear irradiation of pnp junctions shows a pronounced change on their output electrical characteristics. Theoretical analysis, using computer programming (TRANSRAD), shows that exposing silicon transistors to nuclear radiation (neutrons, protons, electrons and gamma-rays) causes the devices to lose most of their forward gain factor. For all the analyzed irradiation conditions both junction leakage current and breakdown voltage are shown to increase pronouncely. The damage effect is found to be function of radiation fluence and energy.
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