Laser‐induced chemical vapor deposition of aluminum
作者:
Thomas H. Baum,
Carl E. Larson,
Robert L. Jackson,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 12
页码: 1264-1266
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101629
出版商: AIP
数据来源: AIP
摘要:
The laser‐induced deposition of high‐purity aluminum metal has been achieved by pyrolytic decomposition of trimethylamine aluminum hydride. The chemical structure of the precursor affords a high ambient vapor pressure which results in rapid rates of aluminum film formation. In addition, the precursor is nonpyrophoric, in contrast to other trialkylaluminum precursors. These combined chemical and physical properties make trimethylamine aluminum hydride an ideal precursor for laser‐induced chemical vapor deposition of aluminun films.
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