We have measured the deep level transient spectroscopy signal height of twoDXlevels usually observed inn‐type doped Al0.32Ga0.68As as a function of the filling pulse width. We report an overshoot in the capture transient of theDXlevel having a larger capture rate. We solve the rate equations for the capture processes of these twoDXlevels simultaneously. The capture transients thus obtained fit the experimental capture transients of these twoDXlevels reasonably well.