Photoinduced‐current‐transient‐spectroscopy and space‐charge‐limited‐current measurements have been performed onn‐type GaS single crystals grown from vapor by iodine chemical transport. Three electron traps located at 0.17, 0.45, and 0.56 eV from the conduction band have been detected, with a thermal capture cross section of 2×10−19, 5×10−14, and 8×10−13cm2, respectively. Moreover, by Hall‐effect measurements, an impurity hopping conduction with an activation energy of 0.12 eV has been evidenced in the range of temperatures between 220 and 320 K.