Ion-implanted MOS technology
作者:
H.G. Dill,
R.W. Bower,
T.N. Toombs,
期刊:
Radiation Effects
(Taylor Available online 1971)
卷期:
Volume 7,
issue 1-2
页码: 45-57
ISSN:0033-7579
年代: 1971
DOI:10.1080/00337577108232563
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
This paper discusses the current state of ion-implantation as applied to MOS technology. It is shown how impurity doping by ion-implantation is used to produce self-aligned MOS gate structures. The reduction in circuit capacitance gives the designer a choice of higher switching speed or lower power dissipation. The availability of a linear resistor of value 1–10 kω/□ allows many new circuit techniques to be applied to monolithic circuits. This paper discusses ion-implantation technology, device design, and circuit performance. A number of implanted circuits are shown. Finally, improvements to the present technology which are still in the R & D phase are described.
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