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Oxide formation on GaAs exposed to CF4+O2plasma

 

作者: Hirohiko Sugahara,   Masamitsu Suzuki,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 6  

页码: 1609-1613

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.582948

 

出版商: American Vacuum Society

 

关键词: OXYGEN MOLECULES;OXIDATION;SURFACE REACTIONS;CARBON TETRAFLUORIDE;AUGER ELECTRON SPECTROSCOPY;PHOTOELECTRON SPECTROSCOPY;X RADIATION;SCHOTTKY BARRIER DIODES;GALLIUM ARSENIDES;MESFET;IV CHARACTERISTIC;ELECTRIC CONDUCTIVITY;PLASMA;SPUTTERING;LAYERS;Ga2O3

 

数据来源: AIP

 

摘要:

The effect of CF4+O2plasma on GaAs is studied using Auger electron spectroscopy and x‐ray photoelectron spectroscopy. AES sputtering profiles and the chemical shift in the Ga 3dphotoelectron peak indicate the Ga2O3‐rich oxide formation on the GaAs surface through exposure to CF4+O2plasma. The increase in the Schottky diode ideality factornand the decrease in GaAs MESFET transconductancegmas functions of plasma exposure time are explained with this oxide formation. The GaAs MESFETI–Vcharacteristics are improved by removing the Ga2O3‐rich oxide layer with chemical treatment.

 

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