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Infrared near-field imaging of implanted semiconductors: Evidence of a pure dielectric contrast

 

作者: A. Lahrech,   R. Bachelot,   P. Gleyzes,   A. C. Boccara,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 5  

页码: 575-577

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119798

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this letter, we demonstrate the ability of our reflection mode scanning near-field optical microscope functioning in the mid-infrared to reveal infrared dielectric contrast in absence of any topographical contrast. This contrast is induced by local structures prepared by low energy boron implantation in silicon. ©1997 American Institute of Physics.

 

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