Infrared absorption in PtSi‐Si interface states
作者:
Th. Flohr,
M. Schulz,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 22
页码: 1534-1535
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96859
出版商: AIP
数据来源: AIP
摘要:
Photoacoustic absorption and transmission measurements are performed to detect the contribution of interface states at the PtSi‐Si interface to the absorption of the metal film. PtSi films on silicon substrates in the thickness range 27–420 A˚ are employed. The results are interpreted by a multilayer optical model. Absorption in an interface layer representing interface states is about 10%.
点击下载:
PDF
(178KB)
返 回