A model for visible photon emission from reverse-biased siliconp-njunctions
作者:
Amjad T. Obeidat,
Zaven Kalayjian,
Andreas G. Andreou,
Jacob B. Khurgin,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 4
页码: 470-471
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118184
出版商: AIP
数据来源: AIP
摘要:
We report visible (380–650 nm) electroluminescence from reverse-biased siliconp-njunctions and fromn-andp-type field-effect transistors designed for a standard chip-fabrication process. We measured the spectra of over 40 junctions and devices and found that they differed from previously reported silicon electroluminescence spectra. We use a hot carrier recombination model and account for Fabry-Perot effects to explain the observed electroluminescence spectrum. Our model’s prediction is in good agreement with the measured spectra. ©1997 American Institute of Physics.
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