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p‐type CdTe epilayers grown by hot‐wall‐beam epitaxy

 

作者: H. Pauli,   K. Hingerl,   E. Abramof,   H. Sitter,   H. Zajicek,   K. Lischka,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 73, issue 8  

页码: 4061-4063

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.352854

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Highly conductingp‐type CdTe films were grown by photoassisted hot‐wall‐beam epitaxy using Li3N as a dopant source. Doping levels can be controlled fromp=4×1016to 2×1018cm−3, as determined by Van der Pauw measurements. The hall mobility ranges from 30 to 100 cm2/V s, depending on the hole concentration. Photoassisted growth enhances the incorporation of dopants by one order of magnitude and decreases the growth rate.

 

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