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The common‐anion rule and the role of cation states: Binary versus ternary semiconductors

 

作者: D. G. Kilday,   G. Margaritondo,   T. F. Ciszek,   S. K. Deb,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 4  

页码: 1364-1368

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584222

 

出版商: American Vacuum Society

 

关键词: ELECTRONIC STRUCTURE;SEMICONDUCTOR MATERIALS;BINARY ALLOY SYSTEMS;TERNARY ALLOY SYSTEMS;HETEROJUNCTIONS;PHOTOEMISSION;QUATERNARY ALLOY SYSTEMS;EXPERIMENTAL DATA

 

数据来源: AIP

 

摘要:

The failure of the common‐anion rule for heterojunction interfaces involving binary semiconductors has been demonstrated by many recent experiments. Wei and Zunger have explained this puzzling result in terms of a substantial role of the cationdstates in determining the valence‐band edge position. The same approach predicts that the valence‐band edge position of certain ternary semiconductors and of their quaternary alloys depends weakly on the composition. We present synchrotron‐radiation photoemission tests of these predictions.

 

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