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Purification and the Growth of Gd Crystals

 

作者: F. J. Cadieu,   D. H. Douglass,  

 

期刊: Journal of Applied Physics  （AIP Available online 1969）
卷期: Volume 40, issue 6  

页码: 2376-2377

 

ISSN:0021-8979

 

年代: 1969

 

DOI:10.1063/1.1657997

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A method of growing large high‐purity Gd single crystals has been developed utilizing a distillation chamber completely sealed by molten Gd. Resistance ratios [&rgr;(294 K)/&rgr;(4.2 K)] up to ∼160 have been attained from a starting point of ∼30 in a single distillation run with the resultant crystal grains approaching a cubic centimeter in volume.

 

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