首页   按字顺浏览 期刊浏览 卷期浏览 Second harmonic generation and atomic‐force microscopy studies of porous silicon
Second harmonic generation and atomic‐force microscopy studies of porous silicon

 

作者: O. A. Aktsipetrov,   A. V. Melnikov,   Yu. N. Moiseev,   T. V. Murzina,   C. W. van Hasselt,   Th. Rasing,   G. Rikken,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 9  

页码: 1191-1193

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115003

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Structural properties of porous silicon were studied with atomic‐force microscopy (AFM) and optical second harmonic generation (SHG). Depending on etching conditions, the SHG response was observed to be either anisotropic, showing C2vsymmetry, or isotropic. This correlated with AFM observations of quasi ordered structures in the first case. The Si etching process was studied byinsituSHG measurements. ©1995 American Institute of Physics.

 

点击下载:  PDF (151KB)



返 回