Low resistance nonalloyed ohmic contacts ofe‐gun evaporated Pt/Ti to S dopedn‐InP 5×1017, 1×1018, and 5×1018cm−3have been fabricated by rapid thermal processing. The contacts to the lower doped substrates (5×1017and 1×1018cm−3) were rectifying as‐deposited as well as after heat treatment at temperatures lower than 350 °C. Higher processing temperatures stimulated the Schottky to ohmic contact conversion with minimum specific contact resistance of 1.5×10−5and 5×10−6&OHgr; cm2, respectively, as a result of rapid thermal processing at 450 °C for 30 s. Heating at a temperature of 550 °C again yielded a Schottky contact. The contact to the 5×1018cm−3InP was ohmic as deposited with a specific contact resistance value of 1.1×10−4&OHgr; cm2. Supplying heat treatment to the contact caused a decrease of the specific contact resistance to a minimum of 8×10−7&OHgr; cm2as a result of rapid thermal processing at 450 °C for 30 s. In all cases, this heat treatment caused a limited interfacial reactions between the Ti and the InP, and resulted in an almost abrupt interface. Heating at temperatures higher than 500 °C resulted in an interfacial intermixing and a mutual migration and reaction of the Ti and the semiconductor elements. The Pt/Ti bilayer structure was highly tensile as deposited (5×109dyn cm−2) and became stress‐free as a result of the interfacial reactions which took place while heating the samples to temperature of 400 °C or higher.