Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20or 1/P20dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10−20cm2needed to fit the lifetime data are reasonable for neutral traps and are consistent with low‐temperature capture cross sections reported for shallow dopants.