The recent findings of Scheer, Wilhelm, and Lewerenz[J. Appl. Phys.66, 5412 (1989)] regarding the application of the electron‐beam‐induced current technique in both the vertical and planar configurations to determine the minority‐carrier diffusion length in low‐diffusion‐length material are compared to the results of an earlier analysis [J. Appl. Phys.57, 1978 (1985)] of the same subject. The differences are briefly discussed.