Electrical transport properties of Au‐doped polycrystalline silicon: Hole trapping effect
作者:
Y. Fujita,
K. Masuda‐Jindo,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 6
页码: 2965-2968
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345416
出版商: AIP
数据来源: AIP
摘要:
The electrical transport properties of Au‐dopedp‐type polycrystalline silicon have been investigated by using the electrical resistivity and Hall mobility measurements. It has been found that the specific resistivity increases with decreasing annealing temperature and Hall mobility decreases with decreasing the effective carrier (hole) concentration, in contrast to the normal result for the single‐crystal specimen. A simple physical interpretation of these results is also given.
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