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Transverse‐junction‐stripe‐geometry double‐heterostructure lasers with very low threshold current

 

作者: H. Namizaki,   H. Kan,   M. Ishii,   A. Ito,  

 

期刊: Journal of Applied Physics  （AIP Available online 1974）
卷期: Volume 45, issue 6  

页码: 2785-2786

 

ISSN:0021-8979

 

年代: 1974

 

DOI:10.1063/1.1663670

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new geometry DH laser is developed in which a very thin GaAs homojunction laser is sandwiched by (GaAl)As layers. The minimum threshold current is 63 and 80 mA for pulsed and cw operation at room temperature, respectively. The possibility of further reduction of threshold current is briefly mentioned.

 

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