Oxygen participation in the formation of the photoluminescence W center and the center’s origin in ion-implanted silicon crystals
作者:
M. Nakamura,
S. Nagai,
Y. Aoki,
H. Naramoto,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 11
页码: 1347-1349
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120990
出版商: AIP
数据来源: AIP
摘要:
The relationship between the photoluminescence (PL) intensity due to the W (orI1) center and the oxygen concentration in implanted silicon crystals was studied. The PL intensity of the W center decreased consistently with increasing oxygen concentration for carbon-implanted samples with a wide range of carbon fluences, while it showed no dependence on the oxygen concentration for samples implanted with elements such as hydrogen, silicon, and heavy metals. Based on these results and considerations of the reactions of intrinsic defects generated by implantation, the origin of the PL W center was attributed to a defect composed of silicon self-interstitials. ©1998 American Institute of Physics.
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