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Effect of Al mole fraction on electron emission at the AlxGa1−xAs/GaAs interface

 

作者: J. S. Kleine,   M. R. Melloch,   J. A. Cooper,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 16  

页码: 1656-1658

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.102229

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the first direct measurement of electron storage time at the AlxGa1−xAs/GaAs interface as a function of Al mole fractionx. Storage capacitors withx=0.4, 0.6, 0.8, and 1.0 were fabricated and their inversion layer electron retention times measured. The optimal mole fraction for electron retention is in the range 0.4≤x≤0.6.

 

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