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Annealing of Ar sputter‐etch‐damaged Si by a Q‐switched ruby laser

 

作者: E. M. Lawson,   M. D. Scott,   A. Rose,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 1  

页码: 35-36

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582538

 

出版商: American Vacuum Society

 

关键词: ruby lasers;annealing;silicon;sputtering;laser radiation;damage;monocrystals;rutherford scattering;backscattering;argon ions

 

数据来源: AIP

 

摘要:

Argon sputter etching of single crystal Si results in damage of the surface and entrapment of the sputtering gas. In a 6‐kV dc sputtering system these effects have been observed and characterized by Rutherford backscattering. Irradiation by a Q‐switched ruby laser was found to restore the crystal quality and to release the entrapped gas.

 

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