Nonequilibrium photon‐induced hotspot: A new mechanism for photodetection in ultrathin metallic films
作者:
A. M. Kadin,
M. W. Johnson,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 25
页码: 3938-3940
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117576
出版商: AIP
数据来源: AIP
摘要:
A new class of photodetectors is proposed, based on localized heating of an ultrathin metallic film due to absorption of individual photons. For a 1 eV photon, the transient temperature rise can be of order 10 K or greater in a nonequilibrium ‘‘hotspot’’ on the nm spatial scale and ps timescale. If current is flowing in a metallic film with a temperature‐dependent resistance, such a hotspot can give rise to a voltage pulse. This can provide the basis for an ultrafast photodetector with spectral sensitivity, in contrast to a conventional bolometer. Prospects for practical realization of infrared photodetectors based on this mechanism are discussed. ©1996 American Institute of Physics.
点击下载:
PDF
(155KB)
返 回