Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition
作者:
Christian A. Zorman,
Aaron J. Fleischman,
Andrew S. Dewa,
Mehran Mehregany,
Chacko Jacob,
Shigehiro Nishino,
Pirouz Pirouz,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 8
页码: 5136-5138
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359745
出版商: AIP
数据来源: AIP
摘要:
Silicon carbide (SiC) films have been grown on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition, using propane, silane, and hydrogen. X‐ray photoelectron spectroscopy data confirm that the films are stoichiometric SiC, with no major impurities. X‐ray diffraction and transmission electron microscopy (TEM) data indicate that the films are single‐crystalline cubic polytype (3C) across the 4 in. substrates. With the exception of slip lines near the edge of the wafers, the films appear featureless when observed optically. The nitrogen concentration, as determined by secondary ion mass spectroscopy, is 4×1018cm3. Cross‐sectional TEM images show a fairly rough, void‐free interface. ©1995 American Institute of Physics.
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