Interactions of in atoms with partial dislocations cores in GaAs: 0.3% In
作者:
N. Burle-Durbec,
B. Pichaud,
F. Minari,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1989)
卷期:
Volume 59,
issue 3
页码: 121-129
ISSN:0950-0839
年代: 1989
DOI:10.1080/09500838908206333
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
It has been established that dislocation mobilities in GaAs are reduced by In doping. This reduction operates mainly on defects exhibiting at least one α (As core) partial dislocation. We discuss here the different interactions between In and α partials which can occur. We propose interstitial In incorporated on dangling bonds as responsible for the observed reduction in mobility. The role of temperature and stress is also discussed.
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