Suppression of silicide formation in Ta/Si system by ion-beam-assisted deposition
作者:
Joon Seop Kwak,
Hong Koo Baik,
Jong-Hoon Kim,
Sung-Man Lee,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 17
页码: 2451-2453
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120086
出版商: AIP
数据来源: AIP
摘要:
In order to increase the failure temperature of a Ta diffusion barrier for Cu, the suppression of silicide formation in a Ta/Si system by ion-beam-assisted deposition of Ta film was investigated. When the Ta layer was deposited without ion bombardment, the reaction between Ta and Si started at 600 °C. In the case where the Ta film was prepared with concurrent ion bombardment, however, the silicide formation was retarded up to 700 °C. The suppression of Ta silicide formation can be attributed to a densification of grain boundaries in the Ta film by ion bombardment, followed by a reduction of the chemical driving force for the initial stage of silicide formation. The Ta diffusion barrier deposited by ion-beam-assisted deposition effectively suppressed the reaction between Si and Cu layers up to 650 °C for 30 min. ©1997 American Institute of Physics.
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