Surface topography and composition of InP(100) after various sulfur passivation treatments
作者:
L. J. Gao,
G. W. Anderson,
F. Esposto,
P. R. Norton,
B. F. Mason,
Z‐H. Lu,
M. J. Graham,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 5
页码: 2053-2056
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588132
出版商: American Vacuum Society
关键词: CHEMICAL COMPOSITION;COMPARATIVE EVALUATIONS;INDIUM ANTIMONIDES;PASSIVATION;ROUGHNESS;SULFUR COMPOUNDS;InP
数据来源: AIP
摘要:
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide‐containing Br2solutions. After S2Cl2treatments, observations using atomic force microscopy indicated that the sample surface was rougher than the as‐received sample. Some residual oxide was also identified by Auger electron spectroscopy and x‐ray photoelectron spectroscopy analysis. Treatment of InP(100) in (NH4)2S and Br2/MeOH solutions containing trace amounts of S2Cl2and (NH4)2S significantly reduced the surface roughness of the as‐received sample. These treated surfaces were also found to be free of oxide and S passivated. These solutions therefore effectively removed the native oxide leaving substrates approaching atomic flatness and subsequently passivated surfaces with sulfur from the solution.
点击下载:
PDF
(796KB)
返 回