We have observed negative resistance behavior in evaporated silicon films at room temperature and at liquid nitrogen temperatures which we believe is due to double injection. This, to our knowledge, is the first reporting of double injection in silicon thin films, as well as the first reporting of an active device prepared from silicon thin films. Sample lengths in previous work have ranged from one hundred to several thousand microns. The films used in our work are 0.4 to 0.6 &mgr; thick.