The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies
作者:
D. A. Woolf,
Z. Sobiesierski,
D. I. Westwood,
R. H. Williams,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 71,
issue 10
页码: 4908-4915
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.350638
出版商: AIP
数据来源: AIP
摘要:
A series of investigations are presented which address various aspects of the growth, by molecular beam epitaxy, ofn‐type (Si doped)on‐axisGaAs/GaAs(111)B.In situcharacterization by reflection high‐energy electron diffraction has identified four surface phases on the static (zero growth rate) surface, and three reconstructions which occur, depending upon the substrate temperature, during growth. Then‐type doping properties of GaAs/GaAs(111)B epilayers have been compared withn‐GaAs/GaAs(100) structures. Hall effect and low‐temperature photoluminescence measurements have demonstrated that it is possible to dope GaAs/GaAs(111)B with Si in the 6×1014to 1018cm−3range. A variable growth temperature study is also presented which examines the surface structural, electrical, optical, and surface morphological properties ofn‐GaAs/GaAs(111)B grown in the 400 to 650 °C temperature range. The onset of electrical conduction, and optically active material, was found to be directly related to changes in the dynamic surface structure. The variable growth temperature study also revealed a temperature regime within which it was possible to significantly improve the surface morphology of on‐axis GaAs/GaAs(111)B structures whilst retaining good electrical and optical properties.
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