Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy
作者:
T. Benabbas,
P. Franc¸ois,
Y. Androussi,
A. Lefebvre,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 5
页码: 2763-2767
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363193
出版商: AIP
数据来源: AIP
摘要:
Finite element (FE) analysis and transmission electron microscopy (TEM) observations have been used to model stress relaxation in InAs quantum dots deposited on (001) GaAs. TEM observations show that these islands are coherently strained and the corresponding strain contrast is simulated using the dynamical electron diffraction contrast theory. The dot strain fields used for the TEM contrast simulations are deduced from FE calculations. These calculations show that elastic stress relaxation mainly occurs at the crest of the island and that the underlying substrate is under tension. That experimental TEM images and simulated images should match shows that the FE method of determination of the dot strain fields is valid (even in the case of microscopic objects), and that the shape of islands can be specified. ©1996 American Institute of Physics.
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