HgCdTe heterojunctions
作者:
Peter R. Bratt,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1983)
卷期:
Volume 1,
issue 3
页码: 1687-1691
ISSN:0734-2101
年代: 1983
DOI:10.1116/1.572258
出版商: American Vacuum Society
关键词: heterojunctions;band structure;energy gap;depletion layers;liquid phase epitaxy;p−n junctions;photocurrents;sputtering;depth profiles;spatial distribution;mercury tellurides;cadmium tellurides
数据来源: AIP
摘要:
HgCdTe heterojunctions consisting of a wide band gapn‐type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p‐type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region betweenxandymaterials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–njunction depletion layer within the graded transition region was the major factor controlling the heterojunction properties. When the depletion layer was located near the narrow band gap material, normal photodiode behavior was observed. When the depletion layer was at the center of the transition region or near the wide band gap material, a potential barrier was formed which inhibited minority carrier photocurrent originating in the p‐type material from crossing the heterojunction. Qualitative energy band models based on the analysis of HgCdTe heterojunctions recently published by Migliorato and White were constructed to explain the observed results.
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